IRF4905PBF vs IRF5305PBF 对比

详细并排对比 IRF4905PBF 出自 Infineon 和 IRF5305PBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRF4905PBF IRF5305PBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.51
FET Type P-Channel P-Channel
Technology HEXFET (IR MOSFET) HEXFET (planar DMOS)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -74 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC 200 W —
On-Resistance RDS(on) max at VGS=-10V 20 mΩ —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) 120 nC 42 nC (typical)
工作温度范围 -55 °C to +175 °C (junction) —
封装 TO-220AB (through-hole) TO-220AB (through-hole, 3-pin + tab)
Pin Configuration Gate - Drain - Source (left to right) —
安装类型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
MSL 等级 1 (not moisture-sensitive for TO-220) —
Drain-to-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
工作结温 — -55C to +175C
Lead-Free Plating (PBF suffix) — Yes (Pb-free)
RoHS 状态 — Compliant

数据手册与资源

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