IRFB3207ZPBF vs FDP86363-F085 Comparaison
Comparaison détaillée côte à côte de IRFB3207ZPBF par Infineon et FDP86363-F085 par onsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFB3207ZPBF | FDP86363-F085 |
|---|---|---|
| Marque | Infineon | onsemi |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $1,18 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | PowerTrench (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | 110 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: single-pulse IDM rating] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier | TO-220AB (3-lead through-hole) | — |
| Type de montage | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Niveau MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 80 V |
| On-Resistance Rds(on) at Vgs=10V | — | 2.8 mOhm typical |
| On-Resistance Rds(on) max at Vgs=10V | — | [DATA_NEEDED: max Rds(on) at Vgs=10V] |
| Gate Threshold Voltage Vgs(th) | — | [DATA_NEEDED: Vgs(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Junction-to-Case Thermal Resistance RthetaJC | — | 0.5 C/W |
| Junction-to-Ambient Thermal Resistance RthetaJA | — | 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet) |
| Plage de température de jonction en fonctionnement | — | -55C to +175C |
| Package Type | — | TO-220-3 (TO-220AB) |
| Polarity / Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 qualified |
| Statut RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED: explicit halogen-free claim] |