IRFB3207ZPBF vs FDP86363-F085 对比

详细并排对比 IRFB3207ZPBF 出自 Infineon 和 FDP86363-F085 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

onsemi
FDP86363-F085 FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi

FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi

FDP86363-F085 ⚠ 最后一次采购

规格对比

参数 IRFB3207ZPBF FDP86363-F085
品牌 Infineon onsemi
分类 MOSFETs MOSFETs
生命周期状态 有效 最后采购期
库存状态 有库存 有库存
单价(USD) $1.62 $1.18
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) PowerTrench (shielded-gate trench)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A 110 A
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: single-pulse IDM rating]
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
工作结温 -55 C to +175 C —
封装 TO-220AB (3-lead through-hole) —
安装类型 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 等级 N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Drain-Source Voltage (V(BR)DSS) — 80 V
On-Resistance Rds(on) at Vgs=10V — 2.8 mOhm typical
On-Resistance Rds(on) max at Vgs=10V — [DATA_NEEDED: max Rds(on) at Vgs=10V]
Gate Threshold Voltage Vgs(th) — [DATA_NEEDED: Vgs(th) min/typ/max]
Power Dissipation (PD) at TC=25C — 300 W
Junction-to-Case Thermal Resistance RthetaJC — 0.5 C/W
Junction-to-Ambient Thermal Resistance RthetaJA — 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet)
工作结温范围 — -55C to +175C
Package Type — TO-220-3 (TO-220AB)
Polarity / Channel Type — N-Channel
Automotive Qualification — AEC-Q101 qualified
RoHS 状态 — Compliant
Lead-Free / Halogen-Free — [DATA_NEEDED: explicit halogen-free claim]

数据手册与资源

浏览全部产品 创建 BOM 获取报价