IRFB3207ZPBF vs FDP86363-F085 Сравнение
Подробное сравнение бок о бок IRFB3207ZPBF от Infineon и FDP86363-F085 от onsemi. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
onsemi
FDP86363-F085 - 80V 110A N-Channel PowerTrench MOSFET | onsemi
FDP86363-F085 ⚠ Последняя закупкаСравнение характеристик
| Параметр | IRFB3207ZPBF | FDP86363-F085 |
|---|---|---|
| Бренд | Infineon | onsemi |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Последняя закупка |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,62 | $1,18 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | PowerTrench (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | 110 A |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: single-pulse IDM rating] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Рабочая температура перехода | -55 C to +175 C | — |
| Корпус | TO-220AB (3-lead through-hole) | — |
| Тип монтажа | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Уровень MSL | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Drain-Source Voltage (V(BR)DSS) | — | 80 V |
| On-Resistance Rds(on) at Vgs=10V | — | 2.8 mOhm typical |
| On-Resistance Rds(on) max at Vgs=10V | — | [DATA_NEEDED: max Rds(on) at Vgs=10V] |
| Gate Threshold Voltage Vgs(th) | — | [DATA_NEEDED: Vgs(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 300 W |
| Junction-to-Case Thermal Resistance RthetaJC | — | 0.5 C/W |
| Junction-to-Ambient Thermal Resistance RthetaJA | — | 62.5 C/W (on 1 in^2 pad of 2oz copper per datasheet) |
| Диапазон рабочей температуры перехода | — | -55C to +175C |
| Package Type | — | TO-220-3 (TO-220AB) |
| Polarity / Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 qualified |
| Статус RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED: explicit halogen-free claim] |