IRFB3207ZPBF vs IRFB4410PBF Comparaison
Comparaison détaillée côte à côte de IRFB3207ZPBF par Infineon et IRFB4410PBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFB3207ZPBF | IRFB4410PBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,62 | $1,15 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | HEXFET |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | MOSFET (Metal Oxide) - HEXFET |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| Type de montage | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Niveau MSL | N/A (through-hole) | 1 (unlimited) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C | — | 88 A (Tc) |
| Continuous Drain Current (Id) @ 100C | — | [DATA_NEEDED: Id @ 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse] |
| Gate-to-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| RDS(on) max @ VGS=10V | — | 10 mOhm |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) | — | 200 W (Tc) |
| Plage de température de fonctionnement | — | -55C to +175C (Tj) |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Statut RoHS | — | Compliant (Pb-free PBF suffix) |