IRFB3207ZPBF vs IRFB4410PBF Сравнение
Подробное сравнение бок о бок IRFB3207ZPBF от Infineon и IRFB4410PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRFB3207ZPBF | IRFB4410PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,62 | $1,15 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | HEXFET |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | MOSFET (Metal Oxide) - HEXFET |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Рабочая температура перехода | -55 C to +175 C | — |
| Корпус | TO-220AB (3-lead through-hole) | TO-220AB (through-hole) |
| Тип монтажа | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Уровень MSL | N/A (through-hole) | 1 (unlimited) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) @ 25C | — | 88 A (Tc) |
| Continuous Drain Current (Id) @ 100C | — | [DATA_NEEDED: Id @ 100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: Idm pulse] |
| Gate-to-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| RDS(on) max @ VGS=10V | — | 10 mOhm |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (Pd) | — | 200 W (Tc) |
| Диапазон рабочих температур | — | -55C to +175C (Tj) |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Статус RoHS | — | Compliant (Pb-free PBF suffix) |