IRFB3207ZPBF vs IRFB4410PBF 비교

다음의 상세 나란히 비교: IRFB3207ZPBF 제조: Infineon 및 IRFB4410PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFB3207ZPBF IRFB4410PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.62 $1.15
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET HEXFET
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) MOSFET (Metal Oxide) - HEXFET
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
동작 접합 온도 -55 C to +175 C —
패키지 TO-220AB (3-lead through-hole) TO-220AB (through-hole)
실장 유형 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 레벨 N/A (through-hole) 1 (unlimited)
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) @ 25C — 88 A (Tc)
Continuous Drain Current (Id) @ 100C — [DATA_NEEDED: Id @ 100C]
Pulsed Drain Current (Idm) — [DATA_NEEDED: Idm pulse]
Gate-to-Source Voltage (Vgs) — [DATA_NEEDED: Vgs max]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
RDS(on) max @ VGS=10V — 10 mOhm
Total Gate Charge (Qg) — 120 nC
Power Dissipation (Pd) — 200 W (Tc)
동작 온도 범위 — -55C to +175C (Tj)
Avalanche Energy Rating — Single-pulse avalanche rated
RoHS 상태 — Compliant (Pb-free PBF suffix)

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