IRFB4410PBF vs IRFB3207ZPBF Comparaison
Comparaison détaillée côte à côte de IRFB4410PBF par Infineon et IRFB3207ZPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFB4410PBF | IRFB3207ZPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,15 | $1,62 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - HEXFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | — |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | — |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| RDS(on) max @ VGS=10V | 10 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) | 200 W (Tc) | — |
| Plage de température de fonctionnement | -55C to +175C (Tj) | — |
| Boîtier | TO-220AB (through-hole) | TO-220AB (3-lead through-hole) |
| Type de montage | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| Niveau MSL | 1 (unlimited) | N/A (through-hole) |
| Statut RoHS | Compliant (Pb-free PBF suffix) | — |
| Series | HEXFET | HEXFET |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Température de jonction en fonctionnement | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |