IRFB4410PBF vs IRFB3207ZPBF 비교

다음의 상세 나란히 비교: IRFB4410PBF 제조: Infineon 및 IRFB3207ZPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFB4410PBF IRFB3207ZPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.15 $1.62
FET Type N-Channel —
Technology MOSFET (Metal Oxide) - HEXFET N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-to-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) @ 25C 88 A (Tc) —
Continuous Drain Current (Id) @ 100C [DATA_NEEDED: Id @ 100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulse] —
Gate-to-Source Voltage (Vgs) [DATA_NEEDED: Vgs max] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
RDS(on) max @ VGS=10V 10 mOhm —
Total Gate Charge (Qg) 120 nC —
Power Dissipation (Pd) 200 W (Tc) —
동작 온도 범위 -55C to +175C (Tj) —
패키지 TO-220AB (through-hole) TO-220AB (3-lead through-hole)
실장 유형 Through Hole Through Hole
Avalanche Energy Rating Single-pulse avalanche rated —
MSL 레벨 1 (unlimited) N/A (through-hole)
RoHS 상태 Compliant (Pb-free PBF suffix) —
Series HEXFET HEXFET
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
동작 접합 온도 — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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