IRFB4410PBF vs IRFB3207ZPBF 比較
詳細な並列比較: IRFB4410PBF メーカー: Infineon および IRFB3207ZPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFB4410PBF | IRFB3207ZPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.15 | $1.62 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - HEXFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) @ 25C | 88 A (Tc) | — |
| Continuous Drain Current (Id) @ 100C | [DATA_NEEDED: Id @ 100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulse] | — |
| Gate-to-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| RDS(on) max @ VGS=10V | 10 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) | 200 W (Tc) | — |
| 動作温度範囲 | -55C to +175C (Tj) | — |
| パッケージ | TO-220AB (through-hole) | TO-220AB (3-lead through-hole) |
| 実装タイプ | Through Hole | Through Hole |
| Avalanche Energy Rating | Single-pulse avalanche rated | — |
| MSLレベル | 1 (unlimited) | N/A (through-hole) |
| RoHS ステータス | Compliant (Pb-free PBF suffix) | — |
| Series | HEXFET | HEXFET |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| 動作接合温度 | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |