IRFR9120NTRPBF vs IRF7319TRPBF Comparaison
Comparaison détaillée côte à côte de IRFR9120NTRPBF par Infineon et IRF7319TRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR9120NTRPBF | IRF7319TRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,32 | $0,62 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -6.6 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | 18 nC (typical) | — |
| Continuous Power Dissipation (PD) at TC=25C | 40 W | — |
| Plage de température de jonction en fonctionnement | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Boîtier | TO-252AA (DPAK), surface mount | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 (unlimited floor life) | — |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin | — |
| Technology | HEXFET fifth-generation IR MOSFET | IR MOSFET / Fifth Generation HEXFET |
| Statut RoHS | Compliant | — |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Plage de température de fonctionnement | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |
| Configuration | — | N-Channel + P-Channel (complementary half-bridge) |