IRFR9120NTRPBF vs IRF7319TRPBF Comparação
Comparação detalhada lado a lado de IRFR9120NTRPBF por Infineon e IRF7319TRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFR9120NTRPBF | IRF7319TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,32 | $0,62 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -6.6 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | 18 nC (typical) | — |
| Continuous Power Dissipation (PD) at TC=25C | 40 W | — |
| Faixa de temperatura de junção de operação | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Encapsulamento | TO-252AA (DPAK), surface mount | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Nível MSL | 1 (unlimited floor life) | — |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin | — |
| Technology | HEXFET fifth-generation IR MOSFET | IR MOSFET / Fifth Generation HEXFET |
| Status RoHS | Compliant | — |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Faixa de temperatura de operação | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |
| Configuration | — | N-Channel + P-Channel (complementary half-bridge) |