IRFR9120NTRPBF vs IRF7319TRPBF 비교

다음의 상세 나란히 비교: IRFR9120NTRPBF 제조: Infineon 및 IRF7319TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR9120NTRPBF IRF7319TRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.32 $0.62
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V —
Continuous Drain Current (ID) at TC=25C -6.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge (Qg) 18 nC (typical) —
Continuous Power Dissipation (PD) at TC=25C 40 W —
동작 접합 온도 범위 -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
패키지 TO-252AA (DPAK), surface mount —
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (unlimited floor life) —
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET IR MOSFET / Fifth Generation HEXFET
RoHS 상태 Compliant —
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
동작 온도 범위 — -55C to +150C (junction)
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Packaging — Tape & Reel (TR suffix)
Configuration — N-Channel + P-Channel (complementary half-bridge)

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