IRFS4321TRLPBF vs IRFS7440TRLPBF Comparaison
Comparaison détaillée côte à côte de IRFS4321TRLPBF par Infineon et IRFS7440TRLPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFS4321TRLPBF | IRFS7440TRLPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,73 | $0,98 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | 120 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | 208 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| Température de jonction en fonctionnement | -55C to +175C | — |
| Boîtier | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK), surface mount |
| Type de montage | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | MOSFET (Metal Oxide Semiconductor) |
| Statut RoHS | Compliant | Compliant (lead-free) |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET |
| On-Resistance (RDS(on)) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 90 nC (typical) |
| Gate Drive Voltage (optimized) | — | 10 V (normal level) |
| Operating Frequency Range (optimized) | — | <100 kHz |
| Plage de température de fonctionnement | — | [DATA_NEEDED: junction temperature range] |
| Qualification | — | JEDEC standard |