IRFS4321TRLPBF vs IRFS7440TRLPBF 对比
详细并排对比 IRFS4321TRLPBF 出自 Infineon 和 IRFS7440TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRFS4321TRLPBF | IRFS7440TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.73 | $0.98 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at Tc=25C | 85 A | 120 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| RDS(on) Max at VGS=10V | 15 mOhm | — |
| RDS(on) Max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-to-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) Typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) Typ | 71 nC | — |
| Total Gate Charge (Qg) Max | 110 nC | — |
| Power Dissipation (PD) at Tc=25C | 350 W | 208 W |
| Thermal Resistance Junction-to-Case (RθJC) Max | 0.45 C/W | — |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | 0.65 C/W (after 1000 cycles -55C to +150C) | — |
| 工作结温 | -55C to +175C | — |
| 封装 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263 (D2PAK), surface mount |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | IR HEXFET (IR MOSFET) | MOSFET (Metal Oxide Semiconductor) |
| RoHS 状态 | Compliant | Compliant (lead-free) |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET |
| On-Resistance (RDS(on)) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 90 nC (typical) |
| Gate Drive Voltage (optimized) | — | 10 V (normal level) |
| Operating Frequency Range (optimized) | — | <100 kHz |
| 工作温度范围 | — | [DATA_NEEDED: junction temperature range] |
| Qualification | — | JEDEC standard |