IRFS4321TRLPBF vs IRFS7440TRLPBF 비교

다음의 상세 나란히 비교: IRFS4321TRLPBF 제조: Infineon 및 IRFS7440TRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFS4321TRLPBF IRFS7440TRLPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.73 $0.98
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at Tc=25C 85 A 120 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) Max at VGS=10V 15 mOhm —
RDS(on) Max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-to-Source Voltage (VGS) Max ±20 V —
Gate Threshold Voltage (VGS(th)) Typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) Typ 71 nC —
Total Gate Charge (Qg) Max 110 nC —
Power Dissipation (PD) at Tc=25C 350 W 208 W
Thermal Resistance Junction-to-Case (RθJC) Max 0.45 C/W —
Thermal Resistance Junction-to-Case (RθJC) End-of-Life 0.65 C/W (after 1000 cycles -55C to +150C) —
동작 접합 온도 -55C to +175C —
패키지 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263 (D2PAK), surface mount
실장 유형 Surface Mount Surface Mount
Technology IR HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
RoHS 상태 Compliant Compliant (lead-free)
Manufacturer — Infineon Technologies
Series — StrongIRFET
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 90 nC (typical)
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
동작 온도 범위 — [DATA_NEEDED: junction temperature range]
Qualification — JEDEC standard

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