IRLB4030PBF vs IRFR120NTRPBF Comparaison
Comparaison détaillée côte à côte de IRLB4030PBF par Infineon et IRFR120NTRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRLB4030PBF | IRFR120NTRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,10 | $0,26 |
| Type de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 87 nC | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | — |
| Power Dissipation (PD) at Tc | 370 W | — |
| Plage de température de fonctionnement | -55C to +175C | — |
| Boîtier | TO-220AB | TO-252AA (DPAK) |
| Type de montage | Through Hole | Surface Mount |
| Technology | HEXFET (StrongIRFET family) | HEXFET (IR MOSFET fifth generation) |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | — |
| Qualification | JEDEC | — |
| Statut RoHS | Compliant | — |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Maximum Power Dissipation (PD) at TC=25C | — | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | — | 16.7 nC |
| Gate-to-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Plage de température de jonction en fonctionnement | — | -55C to +175C |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | — | [DATA_NEEDED: RthJC] |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |