IRLB4030PBF vs IRFR120NTRPBF 비교

다음의 상세 나란히 비교: IRLB4030PBF 제조: Infineon 및 IRFR120NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRLB4030PBF IRFR120NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $3.10 $0.26
트랜지스터 유형 N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc 180 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 4.3 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) 87 nC —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] —
Power Dissipation (PD) at Tc 370 W —
동작 온도 범위 -55C to +175C —
패키지 TO-220AB TO-252AA (DPAK)
실장 유형 Through Hole Surface Mount
Technology HEXFET (StrongIRFET family) HEXFET (IR MOSFET fifth generation)
Logic Level Drive Yes (optimized for 4.5 V to 10 V VGS) —
Qualification JEDEC —
RoHS 상태 Compliant —
Continuous Drain Current (ID) at TC=25C — 9.4 A
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
동작 접합 온도 범위 — -55C to +175C
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청