IRLR3915TRPBF vs IPD30N06S2L13ATMA4 Comparaison
Comparaison détaillée côte à côte de IRLR3915TRPBF par Infineon et IPD30N06S2L13ATMA4 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ ActifComparaison des spécifications
| Paramètre | IRLR3915TRPBF | IPD30N06S2L13ATMA4 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,40 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | — |
| Technology | IR MOSFET (HEXFET, advanced process) | Planar (OptiMOS) |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 61 A | — |
| Continuous Drain Current (ID) at TC=100C | 30 A (Tc, per distributor listing) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | 61 nC | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| Power Dissipation (PD) at TC=25C | 120 W | — |
| Maximum Junction Temperature | 175 C | — |
| Plage de température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier | TO-252AA (DPAK), surface mount | PG-TO252-3-11 (DPAK) |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant (Pb-free PBF suffix) | — |
| Niveau MSL | 1 | — |
| Repetitive Avalanche Rating | Improved (per datasheet) | — |
| Switching Speed | Fast | — |
| Packaging | Tape & Reel (TR) | — |
| PBF / Lead-Free | Yes (PBF suffix = lead-free) | — |
| Part Family | — | OptiMOS |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Température de fonctionnement | — | -55 °C to +175 °C (Tj) |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Nombre de broches | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |