IRLR3915TRPBF vs IPD30N06S2L13ATMA4 Comparison
Detailed side-by-side comparison of IRLR3915TRPBF by Infineon and IPD30N06S2L13ATMA4 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveSpecification Comparison
| Parameter | IRLR3915TRPBF | IPD30N06S2L13ATMA4 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.40 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | β |
| Technology | IR MOSFET (HEXFET, advanced process) | Planar (OptiMOS) |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 61 A | β |
| Continuous Drain Current (ID) at TC=100C | 30 A (Tc, per distributor listing) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| On-Resistance RDS(on) max at VGS=10V | 14 mOhm | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | 61 nC | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Logic-Level Gate Drive | Yes (logic-level compatible) | β |
| Power Dissipation (PD) at TC=25C | 120 W | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Junction Temperature Range | -55 C to +175 C | β |
| Package | TO-252AA (DPAK), surface mount | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (Pb-free PBF suffix) | β |
| MSL Level | 1 | β |
| Repetitive Avalanche Rating | Improved (per datasheet) | β |
| Switching Speed | Fast | β |
| Packaging | Tape & Reel (TR) | β |
| PBF / Lead-Free | Yes (PBF suffix = lead-free) | β |
| Part Family | β | OptiMOS |
| Mode | β | Enhancement |
| Drain-Source Voltage (Vds) | β | 55 V |
| Continuous Drain Current (Id) | β | 30 A (Tc) |
| Power Dissipation (Pd) | β | 136 W (Tc) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (Tj) |
| Automotive Qualification | β | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | β | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) |
| Lead-Free / RoHS | β | Yes (Green Package) |
| Avalanche Tested | β | 100 % production-tested |
| On-State Resistance (Rds(on)) | β | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | β | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | β | [DATA_NEEDED: trr typ] |
| Pin Count | β | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | β | Yes (T&R per IEC 60286-3) |