IRLR3915TRPBF vs IPD30N06S2L13ATMA4 对比
详细并排对比 IRLR3915TRPBF 出自 Infineon 和 IPD30N06S2L13ATMA4 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRLR3915TRPBF | IPD30N06S2L13ATMA4 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.40 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | — |
| Technology | IR MOSFET (HEXFET, advanced process) | Planar (OptiMOS) |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 61 A | — |
| Continuous Drain Current (ID) at TC=100C | 30 A (Tc, per distributor listing) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max at VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | 61 nC | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Logic-Level Gate Drive | Yes (logic-level compatible) | — |
| Power Dissipation (PD) at TC=25C | 120 W | — |
| Maximum Junction Temperature | 175 C | — |
| 工作结温范围 | -55 C to +175 C | — |
| 封装 | TO-252AA (DPAK), surface mount | PG-TO252-3-11 (DPAK) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant (Pb-free PBF suffix) | — |
| MSL 等级 | 1 | — |
| Repetitive Avalanche Rating | Improved (per datasheet) | — |
| Switching Speed | Fast | — |
| Packaging | Tape & Reel (TR) | — |
| PBF / Lead-Free | Yes (PBF suffix = lead-free) | — |
| Part Family | — | OptiMOS |
| Mode | — | Enhancement |
| Drain-Source Voltage (Vds) | — | 55 V |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| 工作温度 | — | -55 °C to +175 °C (Tj) |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| 引脚数量 | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |