JMTG070N06A vs BSZ0901NSIATMA1 Comparaison
Comparaison détaillée côte à côte de JMTG070N06A par Jiejie Micro et BSZ0901NSIATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | JMTG070N06A | BSZ0901NSIATMA1 |
|---|---|---|
| Marque | Jiejie Micro | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,45 | $0,34 |
| Manufacturer | Jiejie Micro (JJW) | Infineon Technologies |
| Part Number | JMTG070N06A | BSZ0901NSIATMA1 |
| Polarity / Type | N-channel Enhancement Mode | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 70 A | — |
| On-Resistance RDS(ON) | < 6 mOhm @ VGS = 10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | Advanced Trench MOSFET | OptiMOS trench N-channel MOSFET |
| Boîtier | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Type de montage | Surface Mount (SMD) | Surface Mount |
| Single Pulse Avalanche Energy (EAS) | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) | — |
| Lead Status | Lead free / RoHS compliant | — |
| Plage de température de fonctionnement | [DATA_NEEDED: TJ max and operating range] | -55 C to +150 C (typical MOSFET range) |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA] | — |
| Configuration | Single N-channel MOSFET | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Nombre de broches | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |
| Statut RoHS | — | Compliant |