JMTG070N06A vs BSZ0901NSIATMA1 비교

다음의 상세 나란히 비교: JMTG070N06A 제조: Jiejie Micro 및 BSZ0901NSIATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Jiejie Micro
JMTG070N06A JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L

JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L

JMTG070N06A ✓ 활성

사양 비교

파라미터 JMTG070N06A BSZ0901NSIATMA1
브랜드 Jiejie Micro Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.45 $0.34
Manufacturer Jiejie Micro (JJW) Infineon Technologies
Part Number JMTG070N06A BSZ0901NSIATMA1
Polarity / Type N-channel Enhancement Mode —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 70 A —
On-Resistance RDS(ON) < 6 mOhm @ VGS = 10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) min/typ/max] —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology Advanced Trench MOSFET OptiMOS trench N-channel MOSFET
패키지 PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
실장 유형 Surface Mount (SMD) Surface Mount
Single Pulse Avalanche Energy (EAS) IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) —
Lead Status Lead free / RoHS compliant —
동작 온도 범위 [DATA_NEEDED: TJ max and operating range] -55 C to +150 C (typical MOSFET range)
Thermal Resistance RthJA [DATA_NEEDED: theta_JA] —
Configuration Single N-channel MOSFET —
Series — OptiMOS 25V
FET Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
핀 수 — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Packaging — Tape & Reel (ATMA1 suffix = 13-inch reel)
RoHS 상태 — Compliant

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