K3LK4L40DM-BGCT vs K3KL3L30CM-BGCU Comparaison
Comparaison détaillée côte à côte de K3LK4L40DM-BGCT par Samsung Electronics et K3KL3L30CM-BGCU par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Actif
Comparaison des spécifications
| Paramètre | K3LK4L40DM-BGCT | K3KL3L30CM-BGCU |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | DRAM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $40,50 | $0,00 |
| Type de mémoire | DRAM (SDRAM component) | LPDDR5X SDRAM (Volatile DRAM) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Débit de données | [DATA_NEEDED: Data Rate] | 8533 Mbps |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: VDD/VDDQ voltage] |
| Latence CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Niveau MSL | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Taille de mémoire | — | 64 Gb (8 GB) |
| Memory Organization | — | x64 |
| Technology | — | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Boîtier | — | FBGA-496 (BGCU) |
| Die Configuration | — | Stacked multi-die DRAM |
| Interface | — | LPDDR5X (standard LPDDR ball interface) |
| Application Segment | — | AI devices and automotive |
| Power Efficiency | — | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| Speed Improvement | — | Up to 1.25x faster than previous generation (per Samsung) |
| Place of Origin (per distributor listing) | — | Johor, Malaysia |