K3LK4L40DM-BGCT vs K3KL3L30CM-BGCU Vergleich
Detaillierter Direktvergleich von K3LK4L40DM-BGCT von Samsung Electronics und K3KL3L30CM-BGCU von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ Aktiv
Spezifikationsvergleich
| Parameter | K3LK4L40DM-BGCT | K3KL3L30CM-BGCU |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | DRAM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $40,50 | $0,00 |
| Speichertyp | DRAM (SDRAM component) | LPDDR5X SDRAM (Volatile DRAM) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | — |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Datenrate | [DATA_NEEDED: Data Rate] | 8533 Mbps |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | [DATA_NEEDED: VDD/VDDQ voltage] |
| CAS-Latenz | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| MSL-Level | [DATA_NEEDED: Moisture Sensitivity Level] | [DATA_NEEDED: moisture sensitivity level] |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Speichergröße | — | 64 Gb (8 GB) |
| Memory Organization | — | x64 |
| Technology | — | LPDDR5X (JEDEC LPDDR5X-class low-power DRAM) |
| Gehäuse | — | FBGA-496 (BGCU) |
| Die Configuration | — | Stacked multi-die DRAM |
| Schnittstelle | — | LPDDR5X (standard LPDDR ball interface) |
| Application Segment | — | AI devices and automotive |
| Power Efficiency | — | Approx. 25% better than previous LPDDR5 generation (per Samsung) |
| Speed Improvement | — | Up to 1.25x faster than previous generation (per Samsung) |
| Place of Origin (per distributor listing) | — | Johor, Malaysia |