K9EUGY8S0M-BCK0 vs K9CHGY8S5C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9EUGY8S0M-BCK0 par Samsung Electro-Mechanics et K9CHGY8S5C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ ActifSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9EUGY8S0M-BCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Marque | Samsung Electro-Mechanics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series V-NAND Flash | — |
| Type de mémoire | NAND Flash (non-volatile) | — |
| Density | [DATA_NEEDED: memory density] | [DATA_NEEDED: total density in Gb] |
| Organisation de la mémoire | [DATA_NEEDED: organization x8/x16] | x8 (8-bit data access), quad CE configuration |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | — |
| Tension d'alimentation | [DATA_NEEDED: VCC voltage] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Access Time (tR) | [DATA_NEEDED: read access time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Boîtier | [DATA_NEEDED: package type and dimensions] | BGA-316 |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount (BGA reflow) |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packing | [DATA_NEEDED: tray or tape and reel] | — |
| Product Type | — | NAND Flash Memory |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Type d'interface | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |