K9EUGY8S0M-BCK0 vs K9CHGY8S5C-CCK0 비교
다음의 상세 나란히 비교: K9EUGY8S0M-BCK0 제조: Samsung Electro-Mechanics 및 K9CHGY8S5C-CCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ 활성Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ 활성사양 비교
| 파라미터 | K9EUGY8S0M-BCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| 브랜드 | Samsung Electro-Mechanics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.00 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series V-NAND Flash | — |
| 메모리 유형 | NAND Flash (non-volatile) | — |
| Density | [DATA_NEEDED: memory density] | [DATA_NEEDED: total density in Gb] |
| 메모리 구성 | [DATA_NEEDED: organization x8/x16] | x8 (8-bit data access), quad CE configuration |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | — |
| 공급 전압 | [DATA_NEEDED: VCC voltage] | — |
| VCCQ Voltage | [DATA_NEEDED: VCCQ voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Access Time (tR) | [DATA_NEEDED: read access time] | — |
| Program Time (tPROG) | [DATA_NEEDED: program time] | — |
| Erase Time (tBERS) | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 패키지 | [DATA_NEEDED: package type and dimensions] | BGA-316 |
| 동작 온도 | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| 실장 유형 | Surface Mount | Surface Mount (BGA reflow) |
| RoHS 상태 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packing | [DATA_NEEDED: tray or tape and reel] | — |
| Product Type | — | NAND Flash Memory |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| 인터페이스 유형 | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E endurance] |