K9FGGY8J5A-CCK0 vs K9IUGY8J7B-CCK0 Comparaison
Comparaison détaillée côte à côte de K9FGGY8J5A-CCK0 par Samsung Electronics et K9IUGY8J7B-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage
K9FGGY8J5A-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9FGGY8J5A-CCK0 | K9IUGY8J7B-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | EEPROM |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,95 | $1,00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series NAND Flash | — |
| Type de mémoire | NAND Flash (non-volatile) | NAND Flash, 3D V-NAND TLC |
| Density | [DATA_NEEDED: density] | — |
| Organisation de la mémoire | [DATA_NEEDED: organization (e.g. x8)] | — |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | TLC (3 bits per cell) |
| Interface | [DATA_NEEDED: asynchronous/toggle/ONFI] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range] | [DATA_NEEDED: VCCQ voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| Boîtier | [DATA_NEEDED: package type (FBGA)] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Statut RoHS | Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) | [DATA_NEEDED: RoHS status] |
| Memory Density | — | 1 Tb (Tera bit) |
| V-NAND Generation | — | V6 (6th generation) |
| Process Node / Layer Count | — | 4448-128L (128-layer) |
| Type d'interface | — | [DATA_NEEDED: bus interface type] |
| Largeur du bus de données | — | [DATA_NEEDED: data bus width] |
| Program/Erase Cycles | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: exact package code] |