K9FGGY8J5A-CCK0 vs K9IUGY8J7B-CCK0 对比

详细并排对比 K9FGGY8J5A-CCK0 出自 Samsung Electronics 和 K9IUGY8J7B-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ 量产中
Samsung Electronics
K9IUGY8J7B-CCK0 K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 ✓ 量产中

规格对比

参数 K9FGGY8J5A-CCK0 K9IUGY8J7B-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 EEPROM EEPROM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.95 $1.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series NAND Flash —
存储器类型 NAND Flash (non-volatile) NAND Flash, 3D V-NAND TLC
Density [DATA_NEEDED: density] —
存储组织 [DATA_NEEDED: organization (e.g. x8)] —
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] TLC (3 bits per cell)
接口 [DATA_NEEDED: asynchronous/toggle/ONFI] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ voltage]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
封装 [DATA_NEEDED: package type (FBGA)] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount (BGA)
RoHS 状态 Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) [DATA_NEEDED: RoHS status]
Memory Density — 1 Tb (Tera bit)
V-NAND Generation — V6 (6th generation)
Process Node / Layer Count — 4448-128L (128-layer)
接口类型 — [DATA_NEEDED: bus interface type]
数据总线宽度 — [DATA_NEEDED: data bus width]
Program/Erase Cycles — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: exact package code]

数据手册与资源

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