K9IUGY8J7B-CCK0 vs K9KUGY8J7C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9IUGY8J7B-CCK0 par Samsung Electronics et K9KUGY8J7C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9KUGY8J7C-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9IUGY8J7B-CCK0 | K9KUGY8J7C-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,00 | $0,00 |
| Memory Density | 1 Tb (Tera bit) | — |
| Type de mémoire | NAND Flash, 3D V-NAND TLC | NAND Flash |
| Cell Type | TLC (3 bits per cell) | TLC (Triple-Level Cell) |
| V-NAND Generation | V6 (6th generation) | — |
| Process Node / Layer Count | 4448-128L (128-layer) | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Type d'interface | [DATA_NEEDED: bus interface type] | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC voltage] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ voltage] | — |
| Largeur du bus de données | [DATA_NEEDED: data bus width] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: endurance rating] |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range] |
| Package Type | [DATA_NEEDED: exact package code] | BGA |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS (per Samsung K9-family product pages) |
| Product Family | — | K9-Series V-NAND |
| Technology | — | Samsung V-NAND (3D NAND) |
| Density | — | [DATA_NEEDED: total device density] |
| Organisation de la mémoire | — | [DATA_NEEDED: page/block/plane organization] |
| Interface | — | [DATA_NEEDED: asynchronous/synchronous toggle interface mode] |
| Tension d'alimentation | — | [DATA_NEEDED: VCC supply voltage range] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |