K9IUGY8J7B-CCK0 vs K9KUGY8J7C-CCK0 对比

详细并排对比 K9IUGY8J7B-CCK0 出自 Samsung Electronics 和 K9KUGY8J7C-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9IUGY8J7B-CCK0 K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 - 1Tb 3D V-NAND TLC Flash | Samsung

K9IUGY8J7B-CCK0 ✓ 量产中
Samsung Electronics
K9KUGY8J7C-CCK0 K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics

K9KUGY8J7C-CCK0 ✓ 量产中

规格对比

参数 K9IUGY8J7B-CCK0 K9KUGY8J7C-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.00 $0.00
Memory Density 1 Tb (Tera bit) —
存储器类型 NAND Flash, 3D V-NAND TLC NAND Flash
Cell Type TLC (3 bits per cell) TLC (Triple-Level Cell)
V-NAND Generation V6 (6th generation) —
Process Node / Layer Count 4448-128L (128-layer) —
Manufacturer Samsung Electronics Samsung Electronics
接口类型 [DATA_NEEDED: bus interface type] —
Supply Voltage (VCC) [DATA_NEEDED: VCC voltage] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ voltage] —
数据总线宽度 [DATA_NEEDED: data bus width] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] —
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] [DATA_NEEDED: endurance rating]
工作温度 [DATA_NEEDED: operating temperature range] Commercial grade (per -CCK0 suffix); exact range [DATA_NEEDED: operating temperature range]
Package Type [DATA_NEEDED: exact package code] BGA
安装类型 Surface Mount (BGA) Surface Mount
RoHS 状态 [DATA_NEEDED: RoHS status] Lead free / RoHS (per Samsung K9-family product pages)
Product Family — K9-Series V-NAND
Technology — Samsung V-NAND (3D NAND)
Density — [DATA_NEEDED: total device density]
存储组织 — [DATA_NEEDED: page/block/plane organization]
接口 — [DATA_NEEDED: asynchronous/synchronous toggle interface mode]
电源电压 — [DATA_NEEDED: VCC supply voltage range]
MSL 等级 — [DATA_NEEDED: moisture sensitivity level]

数据手册与资源

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