K9NUGY8R6B-CCQ0 - 1Tb TLC V-NAND Flash | Samsung | SSD Storage
Référence : K9NUGY8R6B-CCQ0 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1 000 | $0 | $0,00 |
K9NUGY8R6B-CCQ0 Présentation
NAND flash is a non-volatile memory technology that retains data without power and forms the storage foundation of solid-state drives (SSDs), eMMC/UFS modules, and embedded storage controllers. Within the memory hierarchy, this device belongs to the category of raw NAND die: it is connected to a host controller that manages erasure, programming, wear leveling, and error correction (ECC), since NAND requires managed access rather than byte-addressable reads.
Key characteristics include the 1Tb per-die capacity, which reduces die count and simplifies PCB design in high-capacity SSDs, and triple-level-cell density, which stores three bits per cell to lower cost per gigabyte versus MLC. Samsung's V-NAND construction separates the cell array from the peripheral logic, improving program/erase endurance and read-disturb behavior relative to planar NAND.
Architecturally, the device is organized with a page-based interface and standard NAND command protocol. It is intended for controller-driven deployments with strong LDPC-based ECC, since TLC raw bit error rates are higher than SLC. Random read latency and program performance are optimized for parallel channel-and-way topologies in SSD controllers.
Typical applications include client and enterprise SSDs, NVMe storage arrays, set-top-box storage, and industrial embedded storage where high density at low cost per bit is the primary requirement.
A key design consideration is that raw TLC NAND must be paired with a controller supporting the device's timing mode and ECC requirements; firmware must implement wear leveling and bad-block management.
This page combines verified distributor search data, XAIPART family cross-reference listings, and practical design guidance not found in the manufacturer datasheet.
Alternatives de remplacement direct pour K9NUGY8R6B-CCQ0 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec K9NUGY8R6B-CCQ0 (même facteur de forme et même empreinte) — différant par Memory Type, Cell Type, Mounting Type, Density, Package.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
K9MUGY8R4A-CCQ0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9LUGY8J7D-CCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9KUGY8J7C-CCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
Contactez-nous pour le prix
Voir la fiche technique →K9JUGY8J5C-CCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.6 / unité
Voir la fiche technique →K9IUGY8J7B-CCK0
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$1 / unité
Voir la fiche technique →K9NUGY8R6B-CCQ0 Valeurs maximales et caractéristiques électriques
| Type de mémoire | NAND Flash (V-NAND, 3D TLC) |
| Density | 1 Tb |
| Cell Type | Triple-Level Cell (TLC) |
| Boîtier | 176-ball FBGA (176L) |
| Type de montage | Surface Mount (BGA) |
| Interface | Asynchronous / Toggle-mode NAND (per Samsung V-NAND protocol) |
| ECC Requirement | External controller LDPC ECC required |
| Application Class | Consumer / Client / Enterprise SSD raw NAND |
Guide de configuration des broches du K9NUGY8R6B-CCQ0 176-ball fbga (176l)
Configuration des broches du K9NUGY8R6B-CCQ0 (boîtier 176-ball fbga (176l)). Ce circuit intégré numérique comprend des GPIO, des interfaces de communication (UART, SPI, I2C) et des broches d'alimentation. Consultez la fiche technique du fabricant pour les fonctions alternatives des broches et les options de configuration. Indispensable pour la conception de systèmes embarqués et la conception de circuits imprimés.
Aucune donnée de brochage détaillée disponible pour K9NUGY8R6B-CCQ0.
Consultez la fiche technique pour la configuration complète des broches.
Applications typiques
K9NUGY8R6B-CCQ0 convient pour 6 applications: Client SSD Storage, Enterprise NVMe Storage Arrays, Embedded eMMC/UFS Storage, Industrial Embedded Storage, Set-Top Box and Smart TV Storage, Network Attached Storage and Edge Servers.
Client SSD Storage
The K9NUGY8R6B-CCQ0's 1Tb TLC density makes it a strong fit for client SSDs, where cost per gigabyte and PCB area are the dominant constraints. Eight dies deliver 8TB raw per channel group, letting a standard 4-channel controller reach multi-terabyte capacities in a compact M.2 form factor. Its V-NAND architecture provides the read-disturb resilience needed for long idle periods typical of consumer PCs. In a typical design, dies are distributed across channels and ways, and the controller applies LDPC ECC sized for TLC raw bit error rates. Compared with lower-density prior-generation dies such as the K9LUGY8J7D, halving the die count reduces trace congestion and simplifies thermal design.
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Enterprise NVMe Storage Arrays
In enterprise NVMe arrays, the K9NUGY8R6B-CCQ0 provides high-density TLC storage with the endurance profile of Samsung V-NAND, which separates the cell array from peripheral logic to reduce read disturb and improve program/erase reliability. Arrays built from 1Tb dies achieve larger capacities per U.2 or E1.S module, improving rack-level density and power efficiency per terabyte. The controller firmware must implement enterprise-grade LDPC with soft-decision decoding, data path redundancy, and power-loss protection, since TLC raw bit error rates exceed MLC-class devices. Thermal budgeting matters: sustained write workloads raise die temperature, so module-level heat spreaders are standard practice.
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Embedded eMMC/UFS Storage
Raw 1Tb TLC dies such as the K9NUGY8R6B-CCQ0 are stacked and managed inside eMMC and UFS packages for smartphones, tablets, and smart-home devices. The V-NAND die's vertical stacking yields high bit density in a small footprint, which is essential for thin mobile form factors. Inside the managed package, a dedicated controller handles wear leveling, bad-block management, and ECC, shielding the host from TLC-specific reliability behavior. Designers benefit from Samsung's multi-generation 176L platform: the same package outline accommodates prior-generation dies like the K9IUGY8J7B, enabling capacity-tiered product families from a common PCB and mechanical design.
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Industrial Embedded Storage
Industrial systems - factory controllers, gateways, and medical logging devices - require non-volatile storage that survives power loss and wide temperature swings. The K9NUGY8R6B-CCQ0's V-NAND construction offers better read-disturb immunity than planar NAND, an advantage in systems with long idle periods between write bursts. Deployment requires a controller qualified over the industrial temperature range, firmware-level power-loss protection, and conservative endurance budgeting since TLC P/E cycles are limited relative to SLC. Designers often reserve a small pSLC region for critical logs and use the TLC region for bulk data, balancing endurance against the 1Tb die's cost-per-bit advantage.
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Set-Top Box and Smart TV Storage
Set-top boxes and smart TVs need multi-gigabyte recording and app storage at aggressive BOM cost, making high-density TLC NAND the default choice. A single K9NUGY8R6B-CCQ0 die provides 1Tb (128GB) raw capacity, and two dies cover typical 256GB recorder SKUs with a low die count and simple 8-bit NAND interface routing. Because video recording workloads are sequential-write-heavy, TLC program bandwidth is well matched, and LDPC ECC overhead remains manageable. The die's 176-ball FBGA footprint is shared across Samsung's V-NAND generations, so OEMs can qualify one PCB across capacity tiers using dies such as the K9LUGY8J7D for entry models.
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Network Attached Storage and Edge Servers
Edge servers and NAS appliances benefit from the K9NUGY8R6B-CCQ0's combination of TLC cost efficiency and V-NAND endurance for caching and tiering. In write-cache roles, sustained program bandwidth from parallel die channels absorbs burst writes from the network before flushing to HDD tiers. The 1Tb density lets a compact board reach multiple terabytes of cache without stacking complexity, and Samsung's multi-generation 176L footprint allows second-source qualification with prior-generation dies such as the K9MUGY8R4A-CCQ0. Firmware must balance cache wear via SLC-mode zones and monitor die temperature, as continuous cache traffic is the most thermally and endurance-demanding TLC workload.
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Récapitulatif des produits recommandés
Données de référence d'ingénierie pour K9NUGY8R6B-CCQ0 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | K9MUGY8R4A-CCQ0 | K9LUGY8J7D-CCK0 | K9KUGY8J7C-CCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|---|---|---|
| Package | 176-ball FBGA (176L) | 176-ball FBGA (176L) - same platform | 176-ball FBGA (176L) - same platform | 176-ball FBGA (176L) - same platform | 176-ball FBGA (176L) - same platform |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | 3D TLC (V-NAND) | 3D TLC (V-NAND) | 3D TLC (V-NAND) | 3D TLC (V-NAND) | 3D TLC (V-NAND) |
| Generation | K9N (newest in footprint family) | K9M (prior generation) | K9L (older generation) | K9K (older generation) | K9J (older generation) |
| ECC Requirement | External LDPC ECC | External LDPC ECC | External LDPC ECC | External LDPC ECC | External LDPC ECC |
Principaux différenciateurs
- Highest per-die density in the 176L V-NAND footprint family (vs K9MUGY8R4A-CCQ0)
- Newest V-NAND generation with improved reliability behavior (vs K9LUGY8J7D-CCK0)
- Trade-off: requires latest-generation controller qualification (vs K9JUGY8J5C-CCK0)
Notes de conception
At Toggle/ONFI high-speed modes, the DQ0-DQ7 bus and data strobe require matched-length routing with a continuous reference plane. Keep NAND trace lengths under approximately 100 mm and series-terminate the controller side to control reflections. Because raw 1Tb dies are often deployed 4-8 per channel, bus loading is significant: verify AC timing at maximum load with the slowest die in the BOM, including prior-generation substitute dies if dual-sourcing.
TLC NAND must never be operated without LDPC error correction - uncoded TLC raw bit error rates will corrupt data within the retention window. Ensure the controller ECC engine meets the die's required strength for the target endurance and retention profile, and implement read-retry with soft-decision decoding for aged cells. Also implement power-loss protection: a brownout during a multi-plane program leaves half-written pages that firmware must detect and remap via journaling.
Estimated: sustained write workloads on densely packed SSD boards (e.g., 16 dies at roughly 0.25-0.5 W per active die during program) can raise module temperature substantially above ambient. Place thermally conductive vias under the FBGA land pattern, connect them to internal ground planes, and use module-level heat spreaders in enterprise and cache applications. Monitor die temperature via the controller and throttle writes before reaching the datasheet maximum junction temperature.
Follow the Samsung V-NAND layout guidance: keep VCC and VCCQ decoupling capacitors (100 nF per die plus bulk 10 uF per rail) within 2 mm of the FBGA balls, and dedicate solid ground planes rather than ground traces. For dual-source designs mixing K9N and prior-generation K9M dies, verify that ballout and power-rail assignments match per both datasheets before releasing the land pattern; same-platform does not guarantee identical ball maps across generations.
Informations de conformité
Compliance data was not present in the verified web data retrieved as of 2026-09-04. Samsung consumer NAND is typically RoHS compliant, but this must be confirmed from official Samsung product documentation before procurement claims.
