MPX2102D vs MPX2010D Comparaison
Comparaison détaillée côte à côte de MPX2102D par NXP Semiconductors et MPX2010D par STMicroelectronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPX2102D - 100kPa Differential Pressure Sensor | NXP | 4-SIP Module
MPX2102D ObsoleteSTMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActifComparaison des spécifications
| Paramètre | MPX2102D | MPX2010D |
|---|---|---|
| Marque | NXP Semiconductors | STMicroelectronics |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Obsolete | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $13,10 | $9,10 |
| Operating Pressure | 14.5 PSI (100 kPa) | — |
| Pressure Type | Differential | Differential (Port 1 vs Port 2) |
| Type de sortie | Wheatstone Bridge (Analog Voltage) | Analog Wheatstone Bridge (mV) |
| Tension de sortie | 0 mV to 40 mV (at 10 V supply) | — |
| Tension d'alimentation | 10 V typical | — |
| Boîtier / Format | 4-SIP Module | 4-SIP Module (Case 344-15) |
| Port Size | Female, 0.136 in (3.4544 mm) | — |
| Termination Style | Through-Hole PCB | — |
| Type de montage | Through Hole | Through-Hole |
| Applications | Board Mount | — |
| Température de fonctionnement | -40 C to +125 C (per NXP MPX2102 series datasheet) | — |
| Compensated Temperature | 0 C to +85 C | — |
| Housing / Body Style | Unibody Plastic (Round) | — |
| Technology | Piezoresistive Silicon MEMS | — |
| Series | MPX2102 | — |
| Packaging | Tray | — |
| Product Status | Obsolete (per distributor listings) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Output Voltage Span | — | 0 mV to 25 mV at 10V excitation |
| Sensitivity | — | 2.5 mV/kPa (nominal, at 10V excitation) |
| Excitation Voltage | — | 10 V (typical), 16 V (maximum) |
| Linearity | — | 0.1% of full-scale (typical) |
| Plage de température de fonctionnement | — | 0 C to +85 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Nombre de broches | — | 4 |
| On-Chip Temperature Compensation | — | Yes (laser trimmed) |
| Bridge Configuration | — | 4-arm piezoresistive Wheatstone |
| Statut RoHS | — | [DATA_NEEDED: RoHS status from ST datasheet] |
| Sensor Family | — | MPX2010 / MPXV2010G / MPXM2010 |
| Diaphragm Type | — | Single monolithic silicon |