MPX2102D vs MPX2010D Comparación
Comparación detallada lado a lado de MPX2102D por NXP Semiconductors y MPX2010D por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPX2102D - 100kPa Differential Pressure Sensor | NXP | 4-SIP Module
MPX2102D ObsoleteSTMicroelectronics
MPX2010D - 10kPa Differential Pressure Sensor | STMicroelectronics
MPX2010D ✓ ActivoComparación de especificaciones
| Parámetro | MPX2102D | MPX2010D |
|---|---|---|
| Marca | NXP Semiconductors | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Obsolete | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $13,10 | $9,10 |
| Operating Pressure | 14.5 PSI (100 kPa) | — |
| Pressure Type | Differential | Differential (Port 1 vs Port 2) |
| Tipo de salida | Wheatstone Bridge (Analog Voltage) | Analog Wheatstone Bridge (mV) |
| Tensión de salida | 0 mV to 40 mV (at 10 V supply) | — |
| Tensión de alimentación | 10 V typical | — |
| Encapsulado / Carcasa | 4-SIP Module | 4-SIP Module (Case 344-15) |
| Port Size | Female, 0.136 in (3.4544 mm) | — |
| Termination Style | Through-Hole PCB | — |
| Tipo de montaje | Through Hole | Through-Hole |
| Applications | Board Mount | — |
| Temperatura de funcionamiento | -40 C to +125 C (per NXP MPX2102 series datasheet) | — |
| Compensated Temperature | 0 C to +85 C | — |
| Housing / Body Style | Unibody Plastic (Round) | — |
| Technology | Piezoresistive Silicon MEMS | — |
| Series | MPX2102 | — |
| Packaging | Tray | — |
| Product Status | Obsolete (per distributor listings) | — |
| Operating Pressure Range | — | 0 kPa to 10 kPa (0 PSI to 1.45 PSI) |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Output Voltage Span | — | 0 mV to 25 mV at 10V excitation |
| Sensitivity | — | 2.5 mV/kPa (nominal, at 10V excitation) |
| Excitation Voltage | — | 10 V (typical), 16 V (maximum) |
| Linearity | — | 0.1% of full-scale (typical) |
| Rango de temperatura de funcionamiento | — | 0 C to +85 C |
| Storage Temperature Range | — | [DATA_NEEDED: storage temperature range] |
| Número de pines | — | 4 |
| On-Chip Temperature Compensation | — | Yes (laser trimmed) |
| Bridge Configuration | — | 4-arm piezoresistive Wheatstone |
| Estado RoHS | — | [DATA_NEEDED: RoHS status from ST datasheet] |
| Sensor Family | — | MPX2010 / MPXV2010G / MPXM2010 |
| Diaphragm Type | — | Single monolithic silicon |