MPXAZ6115A7U vs MPXAZ6115AP Comparaison
Comparaison détaillée côte à côte de MPXAZ6115A7U par NXP Semiconductors et MPXAZ6115AP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPXAZ6115AP - 15-115 kPa Absolute Pressure Sensor, Side Port | NXP
MPXAZ6115AP ✓ ActifComparaison des spécifications
| Paramètre | MPXAZ6115A7U | MPXAZ6115AP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $10,10 | $10,30 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) |
| Operating Pressure Min | 15 kPa | — |
| Operating Pressure Max | 115 kPa | — |
| Type de sortie | Analog Voltage | Analog Voltage |
| Plage de tension de sortie | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tension d'alimentation | 5.0 V typical | 4.75 V to 5.25 V (5 V nominal) |
| Sensitivity | [DATA_NEEDED: typical sensitivity mV/kPa] | — |
| Accuracy | ±1.5% (0C to 85C, after NXP factory calibration) | +/-1.5% |
| Température de fonctionnement | -40C to +125C | -40 C to +125 C |
| Port Style | Top axial tube, 0.13" (3.17 mm) diameter | Male 0.13 in (3.17 mm) tube, side-mounted |
| Boîtier / Format | 8-DIP Module (0.560 inch, 14.22 mm) | — |
| Type de montage | Through-Hole | Surface Mount |
| Media Compatibility | Non-corrosive dry gases (media resistant) | — |
| Signal Conditioning | On-chip bipolar op-amp + thin-film resistor network | — |
| Temperature Compensation | On-chip, factory calibrated | On-chip, -40 C to +125 C |
| Statut RoHS | Compliant | Compliant |
| Maximum Overpressure | — | [DATA_NEEDED: maximum overpressure rating] |
| Boîtier | — | 8-SMD, Gull Wing, Side Port (SOP-8) |
| Technology | — | Piezoresistive silicon, monolithic with on-chip bipolar op-amp |
| Port Material | — | PPS thermoplastic (media resistant) |