MPXV12GW6U vs MPX5010DP Comparaison
Comparaison détaillée côte à côte de MPXV12GW6U par NXP Semiconductors et MPX5010DP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | MPXV12GW6U | MPX5010DP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,10 | $9,60 |
| Operating Pressure Range | 0 kPa to 10 kPa (1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Type de sortie | Analog Millivolt (Wheatstone bridge) | Analog, ratiometric |
| Output Span | 0 mV to 55 mV at 3 V excitation | — |
| Excitation Voltage | 3 V typical | — |
| Pressure Port Type | Top port, 0.22" (5.59 mm) tube | — |
| Boîtier / Format | 8-SMD, Gull Wing, Top Port | — |
| Type de montage | Surface Mount | Through-hole (SIP) |
| Température de fonctionnement | -40 C to +125 C | 0 C to +85 C (compensated) |
| Accuracy | [DATA_NEEDED: linearity + temperature coefficient] | — |
| Configuration | Vented Gauge (reference to atmosphere) | — |
| Sensor Technology | Silicon piezoresistive (MEMS strain gauge) | — |
| Off-Pressure Offset | 0 mV minimum (no offset specified) | — |
| Compensation | Uncompensated (external calibration required) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | — |
| Bridge Resistance | [DATA_NEEDED: input / output bridge impedance] | — |
| Typical Sensitivity | [DATA_NEEDED: mV/kPa at 3 V] | — |
| Pressure Type | — | Differential |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Plage de tension de sortie | — | 0.2 V to 4.7 V |
| Tension d'alimentation | — | 4.75 V to 5.25 V (5 V typical) |
| Courant d'alimentation | — | [DATA_NEEDED: supply current mA] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Boîtier | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |