MPXV12GW6U vs MPX5010DP 비교
다음의 상세 나란히 비교: MPXV12GW6U 제조: NXP Semiconductors 및 MPX5010DP 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MPXV12GW6U | MPX5010DP |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Pressure Sensors | Pressure Sensors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $5.10 | $9.60 |
| Operating Pressure Range | 0 kPa to 10 kPa (1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| 출력 유형 | Analog Millivolt (Wheatstone bridge) | Analog, ratiometric |
| Output Span | 0 mV to 55 mV at 3 V excitation | — |
| Excitation Voltage | 3 V typical | — |
| Pressure Port Type | Top port, 0.22" (5.59 mm) tube | — |
| 패키지 / 케이스 | 8-SMD, Gull Wing, Top Port | — |
| 실장 유형 | Surface Mount | Through-hole (SIP) |
| 동작 온도 | -40 C to +125 C | 0 C to +85 C (compensated) |
| Accuracy | [DATA_NEEDED: linearity + temperature coefficient] | — |
| Configuration | Vented Gauge (reference to atmosphere) | — |
| Sensor Technology | Silicon piezoresistive (MEMS strain gauge) | — |
| Off-Pressure Offset | 0 mV minimum (no offset specified) | — |
| Compensation | Uncompensated (external calibration required) | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| Bridge Resistance | [DATA_NEEDED: input / output bridge impedance] | — |
| Typical Sensitivity | [DATA_NEEDED: mV/kPa at 3 V] | — |
| Pressure Type | — | Differential |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| 출력 전압 범위 | — | 0.2 V to 4.7 V |
| 공급 전압 | — | 4.75 V to 5.25 V (5 V typical) |
| 공급 전류 | — | [DATA_NEEDED: supply current mA] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| 패키지 | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |