MPXV12GW6U vs MPX5010DP Сравнение
Подробное сравнение бок о бок MPXV12GW6U от NXP Semiconductors и MPX5010DP от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MPXV12GW6U | MPX5010DP |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | Pressure Sensors | Pressure Sensors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $5,10 | $9,60 |
| Operating Pressure Range | 0 kPa to 10 kPa (1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Тип выхода | Analog Millivolt (Wheatstone bridge) | Analog, ratiometric |
| Output Span | 0 mV to 55 mV at 3 V excitation | — |
| Excitation Voltage | 3 V typical | — |
| Pressure Port Type | Top port, 0.22" (5.59 mm) tube | — |
| Корпус / Типоразмер | 8-SMD, Gull Wing, Top Port | — |
| Тип монтажа | Surface Mount | Through-hole (SIP) |
| Рабочая температура | -40 C to +125 C | 0 C to +85 C (compensated) |
| Accuracy | [DATA_NEEDED: linearity + temperature coefficient] | — |
| Configuration | Vented Gauge (reference to atmosphere) | — |
| Sensor Technology | Silicon piezoresistive (MEMS strain gauge) | — |
| Off-Pressure Offset | 0 mV minimum (no offset specified) | — |
| Compensation | Uncompensated (external calibration required) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Bridge Resistance | [DATA_NEEDED: input / output bridge impedance] | — |
| Typical Sensitivity | [DATA_NEEDED: mV/kPa at 3 V] | — |
| Pressure Type | — | Differential |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Диапазон выходного напряжения | — | 0.2 V to 4.7 V |
| Напряжение питания | — | 4.75 V to 5.25 V (5 V typical) |
| Ток потребления | — | [DATA_NEEDED: supply current mA] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Корпус | — | 6-SIP Module |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |