MPXV5100DP vs MPXV5004DP Comparaison
Comparaison détaillée côte à côte de MPXV5100DP par NXP Semiconductors et MPXV5004DP par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MPXV5100DP - 100kPa Differential Pressure Sensor, 5V, 8-SOP | NXP
MPXV5100DP ✓ ActifComparaison des spécifications
| Paramètre | MPXV5100DP | MPXV5004DP |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | Pressure Sensors | Pressure Sensors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,10 | $7,40 |
| Pressure Type | Differential | Differential (Dual Port, Same Side) |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Type de sortie | Analog, Ratiometric Voltage | Analog, Ratiometric to VCC |
| Plage de tension de sortie | 0.2 V to 4.7 V | 1.0 V to 4.9 V at 5 V supply |
| Tension d'alimentation | 4.75 V to 5.25 V (nominal 5 V) | 4.75 V to 5.25 V (5 V typical) |
| Sensitivity | 45 mV/kPa (nominal) | — |
| Pressure Accuracy | +/- 5% (max, over compensated range) | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Port Style | Dual horizontal ports, same side | — |
| Port Size | 0.13 inch (3.3 mm) tube | — |
| Boîtier | 8-BSOP (0.475 inch, 12.06 mm width), dual ports same side | 8-BSOP (CASE 1351-01), 12.06 mm width |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | Compliant |
| Sensor Technology | Piezoresistive (silicon MEMS) with on-chip signal conditioning | — |
| Pressure Range | — | 0 kPa to 3.92 kPa (0 to 0.57 PSI) |
| Port Type | — | Male Tube, 3.3 mm O.D., Dual Same-Side |
| Courant d'alimentation | — | 10 mA typical |
| Accuracy | — | ±1.5% Vfss typical (after auto-zero) |
| Storage Temperature | — | -30°C to +100°C |
| Response Time | — | 1 ms typical |
| Sensing Technology | — | Piezoresistive (MEMS strain gauge) |
| Signal Conditioning | — | On-chip amplified and calibrated |