MPXV5100DP vs MPXV5004DP Comparação
Comparação detalhada lado a lado de MPXV5100DP por NXP Semiconductors e MPXV5004DP por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MPXV5100DP - 100kPa Differential Pressure Sensor, 5V, 8-SOP | NXP
MPXV5100DP ✓ AtivoComparação de especificações
| Parâmetro | MPXV5100DP | MPXV5004DP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | Pressure Sensors | Pressure Sensors |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $9,10 | $7,40 |
| Pressure Type | Differential | Differential (Dual Port, Same Side) |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Tipo de saída | Analog, Ratiometric Voltage | Analog, Ratiometric to VCC |
| Faixa de tensão de saída | 0.2 V to 4.7 V | 1.0 V to 4.9 V at 5 V supply |
| Tensão de alimentação | 4.75 V to 5.25 V (nominal 5 V) | 4.75 V to 5.25 V (5 V typical) |
| Sensitivity | 45 mV/kPa (nominal) | — |
| Pressure Accuracy | +/- 5% (max, over compensated range) | — |
| Temperatura de operação | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Port Style | Dual horizontal ports, same side | — |
| Port Size | 0.13 inch (3.3 mm) tube | — |
| Encapsulamento | 8-BSOP (0.475 inch, 12.06 mm width), dual ports same side | 8-BSOP (CASE 1351-01), 12.06 mm width |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Sensor Technology | Piezoresistive (silicon MEMS) with on-chip signal conditioning | — |
| Pressure Range | — | 0 kPa to 3.92 kPa (0 to 0.57 PSI) |
| Port Type | — | Male Tube, 3.3 mm O.D., Dual Same-Side |
| Corrente de alimentação | — | 10 mA typical |
| Accuracy | — | ±1.5% Vfss typical (after auto-zero) |
| Storage Temperature | — | -30°C to +100°C |
| Response Time | — | 1 ms typical |
| Sensing Technology | — | Piezoresistive (MEMS strain gauge) |
| Signal Conditioning | — | On-chip amplified and calibrated |