MPXV5100DP vs MPXV5004DP Vergleich
Detaillierter Direktvergleich von MPXV5100DP von NXP Semiconductors und MPXV5004DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPXV5100DP - 100kPa Differential Pressure Sensor, 5V, 8-SOP | NXP
MPXV5100DP ✓ AktivSpezifikationsvergleich
| Parameter | MPXV5100DP | MPXV5004DP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,10 | $7,40 |
| Pressure Type | Differential | Differential (Dual Port, Same Side) |
| Operating Pressure Range | 0 kPa to 100 kPa (0 PSI to 14.5 PSI) | — |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Ausgangstyp | Analog, Ratiometric Voltage | Analog, Ratiometric to VCC |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | 1.0 V to 4.9 V at 5 V supply |
| Versorgungsspannung | 4.75 V to 5.25 V (nominal 5 V) | 4.75 V to 5.25 V (5 V typical) |
| Sensitivity | 45 mV/kPa (nominal) | — |
| Pressure Accuracy | +/- 5% (max, over compensated range) | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | 0°C to +85°C |
| Port Style | Dual horizontal ports, same side | — |
| Port Size | 0.13 inch (3.3 mm) tube | — |
| Gehäuse | 8-BSOP (0.475 inch, 12.06 mm width), dual ports same side | 8-BSOP (CASE 1351-01), 12.06 mm width |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Sensor Technology | Piezoresistive (silicon MEMS) with on-chip signal conditioning | — |
| Pressure Range | — | 0 kPa to 3.92 kPa (0 to 0.57 PSI) |
| Port Type | — | Male Tube, 3.3 mm O.D., Dual Same-Side |
| Versorgungsstrom | — | 10 mA typical |
| Accuracy | — | ±1.5% Vfss typical (after auto-zero) |
| Storage Temperature | — | -30°C to +100°C |
| Response Time | — | 1 ms typical |
| Sensing Technology | — | Piezoresistive (MEMS strain gauge) |
| Signal Conditioning | — | On-chip amplified and calibrated |