MRF6S19060NR1 vs MRF6S19060NBR1 Comparaison
Comparaison détaillée côte à côte de MRF6S19060NR1 par NXP Semiconductors et MRF6S19060NBR1 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
MRF6S19060NBR1 ✓ ActifComparaison des spécifications
| Paramètre | MRF6S19060NR1 | MRF6S19060NBR1 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $25,10 | $28,90 |
| Type de transistor | N-Channel LDMOS (RF Power) | N-Channel RF Power MOSFET |
| Technology | Lateral MOSFET, Enhancement Mode | Lateral Enhancement-Mode MOSFET |
| Drain-to-Source Voltage (V DSS) | 68 V | — |
| Operating Drain Voltage (Test) | 28 V | — |
| Continuous Drain Current (I D) | [DATA_NEEDED: ID max] | — |
| Output Power (P AVG, N-CDMA) | 12 W average | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 1.93 GHz | — |
| Power Gain (Gps) at Test | 16 dB typical | — |
| Drain Efficiency | >30% typical at P3dB | [DATA_NEEDED: drain efficiency] |
| Test Quiescent Current (I DQ) | 610 mA | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Boîtier | TO-270 WB-4 (4-lead over-molded plastic) | TO-272 WB-4 (Wide-Body ceramic) |
| Type de montage | Surface Mount | Surface Mount |
| Lead Free / RoHS | Lead Free (per Freescale datasheet) | — |
| Application | N-CDMA, WCDMA, TDMA, CDMA base station amplifiers | — |
| Drain-Source Voltage (VDS) | — | 28 V |
| Drain Current (ID) | — | 610 mA |
| Output Power (Average) | — | 12 W |
| Output Power (CW/Pulsed) | — | [DATA_NEEDED: CW/Pulsed peak power] |
| Power Gain | — | 16 dB typical at 1.93 GHz |
| Operating Mode | — | Class AB / Class C |
| ESD Protection | — | Yes (integrated) |
| Load Mismatch Tolerance | — | 5:1 VSWR (all phase angles) |
| Statut RoHS | — | Compliant |
| Lead Finish | — | [DATA_NEEDED: lead finish] |
| Température de fonctionnement | — | -40C to +150C (TJ) |