MRF6S19060NR1 vs MRF6S19060NBR1 Comparação

Comparação detalhada lado a lado de MRF6S19060NR1 por NXP Semiconductors e MRF6S19060NBR1 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF6S19060NR1 MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP

MRF6S19060NR1 - 12W RF LDMOS 1930-1990MHz N-CDMA | NXP

MRF6S19060NR1 ✓ Ativo
NXP Semiconductors
MRF6S19060NBR1 MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272

MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272

MRF6S19060NBR1 ✓ Ativo

Comparação de especificações

Parâmetro MRF6S19060NR1 MRF6S19060NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $25,10 $28,90
Tipo de transistor N-Channel LDMOS (RF Power) N-Channel RF Power MOSFET
Technology Lateral MOSFET, Enhancement Mode Lateral Enhancement-Mode MOSFET
Drain-to-Source Voltage (V DSS) 68 V —
Operating Drain Voltage (Test) 28 V —
Continuous Drain Current (I D) [DATA_NEEDED: ID max] —
Output Power (P AVG, N-CDMA) 12 W average —
Frequency Range 1930 MHz to 1990 MHz 1930 MHz to 1990 MHz
Test Frequency 1.93 GHz —
Power Gain (Gps) at Test 16 dB typical —
Drain Efficiency >30% typical at P3dB [DATA_NEEDED: drain efficiency]
Test Quiescent Current (I DQ) 610 mA —
Gate Threshold Voltage (V GS(th)) [DATA_NEEDED: Vgs(th) value] —
Encapsulamento TO-270 WB-4 (4-lead over-molded plastic) TO-272 WB-4 (Wide-Body ceramic)
Tipo de montagem Surface Mount Surface Mount
Lead Free / RoHS Lead Free (per Freescale datasheet) —
Application N-CDMA, WCDMA, TDMA, CDMA base station amplifiers —
Drain-Source Voltage (VDS) — 28 V
Drain Current (ID) — 610 mA
Output Power (Average) — 12 W
Output Power (CW/Pulsed) — [DATA_NEEDED: CW/Pulsed peak power]
Power Gain — 16 dB typical at 1.93 GHz
Operating Mode — Class AB / Class C
ESD Protection — Yes (integrated)
Load Mismatch Tolerance — 5:1 VSWR (all phase angles)
Status RoHS — Compliant
Lead Finish — [DATA_NEEDED: lead finish]
Temperatura de operação — -40C to +150C (TJ)

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação