MRF6S19060NR1 vs MRF6S19060NBR1 비교
다음의 상세 나란히 비교: MRF6S19060NR1 제조: NXP Semiconductors 및 MRF6S19060NBR1 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF6S19060NBR1 - 12W 1.93GHz RF Power MOSFET N-Channel TO-272
MRF6S19060NBR1 ✓ 활성사양 비교
| 파라미터 | MRF6S19060NR1 | MRF6S19060NBR1 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $25.10 | $28.90 |
| 트랜지스터 유형 | N-Channel LDMOS (RF Power) | N-Channel RF Power MOSFET |
| Technology | Lateral MOSFET, Enhancement Mode | Lateral Enhancement-Mode MOSFET |
| Drain-to-Source Voltage (V DSS) | 68 V | — |
| Operating Drain Voltage (Test) | 28 V | — |
| Continuous Drain Current (I D) | [DATA_NEEDED: ID max] | — |
| Output Power (P AVG, N-CDMA) | 12 W average | — |
| Frequency Range | 1930 MHz to 1990 MHz | 1930 MHz to 1990 MHz |
| Test Frequency | 1.93 GHz | — |
| Power Gain (Gps) at Test | 16 dB typical | — |
| Drain Efficiency | >30% typical at P3dB | [DATA_NEEDED: drain efficiency] |
| Test Quiescent Current (I DQ) | 610 mA | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| 패키지 | TO-270 WB-4 (4-lead over-molded plastic) | TO-272 WB-4 (Wide-Body ceramic) |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead Free / RoHS | Lead Free (per Freescale datasheet) | — |
| Application | N-CDMA, WCDMA, TDMA, CDMA base station amplifiers | — |
| Drain-Source Voltage (VDS) | — | 28 V |
| Drain Current (ID) | — | 610 mA |
| Output Power (Average) | — | 12 W |
| Output Power (CW/Pulsed) | — | [DATA_NEEDED: CW/Pulsed peak power] |
| Power Gain | — | 16 dB typical at 1.93 GHz |
| Operating Mode | — | Class AB / Class C |
| ESD Protection | — | Yes (integrated) |
| Load Mismatch Tolerance | — | 5:1 VSWR (all phase angles) |
| RoHS 상태 | — | Compliant |
| Lead Finish | — | [DATA_NEEDED: lead finish] |
| 동작 온도 | — | -40C to +150C (TJ) |