MRF6S9045NR1 vs MRF6S9160HSR3 Comparaison

Comparaison détaillée côte à côte de MRF6S9045NR1 par NXP Semiconductors et MRF6S9160HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

NXP Semiconductors
MRF6S9045NR1 MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 - 880MHz 10W RF Power LDMOS | NXP

MRF6S9045NR1 ✓ Actif
NXP Semiconductors
MRF6S9160HSR3 MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors

MRF6S9160HSR3 ⚠ Dernier achat

Comparaison des spécifications

Paramètre MRF6S9045NR1 MRF6S9160HSR3
Marque NXP Semiconductors NXP Semiconductors
Catégorie MOSFETs MOSFETs
Statut du cycle de vie Actif Dernier achat
Statut du stock In Stock In Stock
Prix unitaire (USD) $16,40 $92,40
Type de transistor LDMOS, N-Channel Enhancement-Mode LDMOS, N-Channel Enhancement-Mode Lateral MOSFET
Technology Lateral MOSFET (RF Power) —
Drain-Source Voltage (VDS) Rated 68 V —
Operating Drain Voltage (VDD) 28 V (typical) —
Continuous Drain Current (ID) 10 uA (rated) —
Quiescent Current (IDQ) 350 mA —
Output Power (Pout) 10 W Avg. —
Operating Frequency 880 MHz (up to 1000 MHz) 865 MHz to 960 MHz
Power Gain 22.7 dB 20.9 dB typical at 880 MHz
Drain Efficiency [DATA_NEEDED: typical efficiency percentage at Pout=10W] 31% typical at 880 MHz
Boîtier / Format TO-270-2 (Case 1265-09, Style 1) —
Type de montage Surface Mount Flange / Chassis Mount with screw holes
Lead-Free / RoHS Yes (N suffix = lead-free terminations) —
VSWR Ruggedness Infinite VSWR at rated VDD —
Application 880 MHz Single-Carrier N-CDMA Base Station PA RF Power Amplifier
Manufacturer Freescale Semiconductor (acquired by NXP) —
Test Frequency — 880 MHz
Drain-Source Voltage (Vdss) Rated — 68 V
Operating Voltage (VDD) — 28 V
Test Bias Current (IDQ) — 1.2 A
Output Power (Pout, Avg.) — 35 W Avg.
ACPR @ 750 kHz Offset — -46.8 dBc (N-CDMA)
Boîtier — NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount
Lead-Free Status — Lead free (HSR3 suffix)
Designed Waveforms — N-CDMA, GSM, GSM EDGE, multicarrier

Fiches techniques et ressources

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