MRF6S9045NR1 vs MRF6S9160HSR3 Comparação
Comparação detalhada lado a lado de MRF6S9045NR1 por NXP Semiconductors e MRF6S9160HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Última compraComparação de especificações
| Parâmetro | MRF6S9045NR1 | MRF6S9160HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Última compra |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $16,40 | $92,40 |
| Tipo de transistor | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | — |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | 865 MHz to 960 MHz |
| Power Gain | 22.7 dB | 20.9 dB typical at 880 MHz |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | 31% typical at 880 MHz |
| Encapsulamento / Caixa | TO-270-2 (Case 1265-09, Style 1) | — |
| Tipo de montagem | Surface Mount | Flange / Chassis Mount with screw holes |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | RF Power Amplifier |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | — |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Encapsulamento | — | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |