MRF6S9045NR1 vs MRF6S9160HSR3 Vergleich
Detaillierter Direktvergleich von MRF6S9045NR1 von NXP Semiconductors und MRF6S9160HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MRF6S9045NR1 | MRF6S9160HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $16,40 | $92,40 |
| Transistortyp | LDMOS, N-Channel Enhancement-Mode | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | Lateral MOSFET (RF Power) | — |
| Drain-Source Voltage (VDS) Rated | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V (typical) | — |
| Continuous Drain Current (ID) | 10 uA (rated) | — |
| Quiescent Current (IDQ) | 350 mA | — |
| Output Power (Pout) | 10 W Avg. | — |
| Operating Frequency | 880 MHz (up to 1000 MHz) | 865 MHz to 960 MHz |
| Power Gain | 22.7 dB | 20.9 dB typical at 880 MHz |
| Drain Efficiency | [DATA_NEEDED: typical efficiency percentage at Pout=10W] | 31% typical at 880 MHz |
| Gehäuse / Bauform | TO-270-2 (Case 1265-09, Style 1) | — |
| Montageart | Surface Mount | Flange / Chassis Mount with screw holes |
| Lead-Free / RoHS | Yes (N suffix = lead-free terminations) | — |
| VSWR Ruggedness | Infinite VSWR at rated VDD | — |
| Application | 880 MHz Single-Carrier N-CDMA Base Station PA | RF Power Amplifier |
| Manufacturer | Freescale Semiconductor (acquired by NXP) | — |
| Test Frequency | — | 880 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Gehäuse | — | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |