MRF7S21150HSR3 vs MW4IC2230MBR5 Comparaison
Comparaison détaillée côte à côte de MRF7S21150HSR3 par NXP Semiconductors et MW4IC2230MBR5 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF7S21150HSR3 - 28V 44W RF Power LDMOS, 2110-2170 MHz | NXP
MRF7S21150HSR3 ObsoleteComparaison des spécifications
| Paramètre | MRF7S21150HSR3 | MW4IC2230MBR5 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | RF Amplifiers |
| Statut du cycle de vie | Obsolete | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $62,80 | $29,85 |
| Type de transistor | N-Channel LDMOS RF Power MOSFET | — |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Test Voltage | 28 V | — |
| Rated Drain Voltage (Vds max) | 65 V | — |
| Average Output Power | 44 W (W-CDMA) | — |
| Peak Output Power | 150 W | — |
| Power Gain | 17.5 dB (typical at 2.14 GHz) | 31 dB (typical) |
| Test Current | 1.35 A | — |
| Boîtier | NI-780S (NI-780 HS variant) | — |
| Configuration | Single, push-pull final stage | — |
| Type de montage | Flange / bolt-down with ceramic body | Surface Mount (with heatsink) |
| Lead Configuration | High-source-leads (HS) variant | — |
| Operating Mode | Class AB / Doherty | Class AB (typical) |
| Application | W-CDMA, LTE base station final-stage PA | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs status] |
| JEDEC Qualification | JESD22 thermal/mechanical | — |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Frequency Range | — | 1.6 GHz to 2.4 GHz |
| Output Power (Pout) | — | 30 W (CW) |
| Supply Voltage (Vdd) | — | 26 V nominal |
| Quiescent Current (Idq) | — | 60 mA |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Boîtier / Format | — | TO-272 WB-16 Variant, Flat Leads (over-molded plastic) |
| Supported Air Interfaces | — | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Input Matching | — | Internal wideband matching network |
| Lead Finish | — | [DATA_NEEDED: lead finish] |