MRF8S21120HSR3 vs MRF8S21100HSR3 Comparaison
Comparaison détaillée côte à côte de MRF8S21120HSR3 par NXP Semiconductors et MRF8S21100HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ ActifComparaison des spécifications
| Paramètre | MRF8S21120HSR3 | MRF8S21100HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $59,95 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF8S21120HSR3 | — |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Frequency Range | 2110-2170 MHz | 2110 MHz to 2170 MHz |
| Output Power (P1dB / average) | 28 W average, W-CDMA / LTE | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Operating Drain Voltage | 28 V | — |
| Power Gain (Typical) | 17.6 dB at 2.17 GHz | — |
| Drain Efficiency (Typical) | [DATA_NEEDED: datasheet efficiency figure] | — |
| Operating Mode | Class AB / Class C | — |
| Package Type | NI-780HS (ceramic flange) | — |
| Case Mounting | Source on case (flange grounding) | — |
| Nombre de broches | 2-pin (Gate, Drain) | — |
| Style de montage | Through-hole / bolt-down flange | — |
| Niveau MSL | 1 (unlimited) | — |
| Statut RoHS | RoHS compliant | Compliant (per NXP product family) |
| Lead-Free | Yes | Yes |
| Type de transistor | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Boîtier / Format | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| Type de montage | — | Chassis / flange mount, screw-down |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |