MRF8S21120HSR3 vs MRF8S21100HSR3 Vergleich
Detaillierter Direktvergleich von MRF8S21120HSR3 von NXP Semiconductors und MRF8S21100HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF8S21120HSR3 | MRF8S21100HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $59,95 | $65,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRF8S21120HSR3 | — |
| Device Type | N-Channel Enhancement-Mode Lateral RF Power MOSFET | — |
| Frequency Range | 2110-2170 MHz | 2110 MHz to 2170 MHz |
| Output Power (P1dB / average) | 28 W average, W-CDMA / LTE | — |
| Drain-Source Breakdown Voltage V(BR)DSS | 65 V | — |
| Operating Drain Voltage | 28 V | — |
| Power Gain (Typical) | 17.6 dB at 2.17 GHz | — |
| Drain Efficiency (Typical) | [DATA_NEEDED: datasheet efficiency figure] | — |
| Operating Mode | Class AB / Class C | — |
| Package Type | NI-780HS (ceramic flange) | — |
| Case Mounting | Source on case (flange grounding) | — |
| Anzahl der Pins | 2-pin (Gate, Drain) | — |
| Montagestil | Through-hole / bolt-down flange | — |
| MSL-Level | 1 (unlimited) | — |
| RoHS-Status | RoHS compliant | Compliant (per NXP product family) |
| Lead-Free | Yes | Yes |
| Transistortyp | — | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Gehäuse / Bauform | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | — | Single, push-pull N/A |
| Montageart | — | Chassis / flange mount, screw-down |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |